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Kogus | |
---|---|
1+ | 9,930 € |
5+ | 9,220 € |
10+ | 8,510 € |
50+ | 5,990 € |
100+ | 5,570 € |
250+ | 5,560 € |
Tooteteave
Toote ülevaade
The IPW65R045C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Reduced energy stored in output capacitance (Eoss)
- Lower gate charge
- Space-saving through reduction of parts
- Improved safety margin
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
Rakendused
Communications & Networking, Computers & Computer Peripherals, Alternative Energy, Power Management
Tehnilised andmed
N Channel
46A
TO-247
10V
227W
150°C
-
No SVHC (21-Jan-2025)
650V
0.04ohm
Through Hole
3.5V
3Pins
-
-
Tehnilised dokumendid (3)
Alternatiivid tootele IPW65R045C7FKSA1
Leiti 5 toodet
Seotud tooted
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
RoHS
RoHS
Toote vastavussertifikaat