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IPB60R099CPATMA1
Power MOSFET, N Channel, 650 V, 31 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
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TootjaINFINEON
Tootja toote nrIPB60R099CPATMA1
Tellimiskood1664014RL
Teise nimegaIPB60R099CP , SP000088490
Tehniliste andmete leht
454 Laos
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Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 100+ | 3,610 € |
| 500+ | 3,600 € |
| 1000+ | 2,940 € |
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Minimaalne: 100
Mitmekordne: 1
366,00 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIPB60R099CPATMA1
Tellimiskood1664014RL
Teise nimegaIPB60R099CP , SP000088490
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id31A
Drain Source On State Resistance0.099ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation255W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The IPB60R099CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.
- Low figure-of-merit(FOM) RON x Qg
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Ultra low RDS (ON)
- Very fast switching
- Internal Rg very low
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
Rakendused
Industrial, Power Management, Communications & Networking, Consumer Electronics, Alternative Energy
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
31A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
255W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.099ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (3)
Alternatiivid tootele IPB60R099CPATMA1
Leiti 1 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.00143
Toote jälitatavus