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IPB038N12N3GATMA1
Power MOSFET, N Channel, 120 V, 120 A, 3800 µohm, TO-263 (D2PAK), Surface Mount
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TootjaINFINEON
Tootja toote nrIPB038N12N3GATMA1
Tellimiskood2212825RL
Teise nimegaIPB038N12N3 G, SP000694160
Tehniliste andmete leht
914 Laos
1 000 Varusid saab nüüd reserveerida
Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 50+ | 2,260 € |
| 200+ | 2,230 € |
| 500+ | 2,190 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 100
Mitmekordne: 1
231,00 € (KM-ta)
Sellele tootele lisatakse ümberkerimise tasu 5,00 €
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Tooteteave
TootjaINFINEON
Tootja toote nrIPB038N12N3GATMA1
Tellimiskood2212825RL
Teise nimegaIPB038N12N3 G, SP000694160
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id120A
Drain Source On State Resistance3800µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The IPB038N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance R DS(on)
- Excellent gate charge x RDS (NO) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- N-channel, normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Rakendused
Power Management, Motor Drive & Control, Computers & Computer Peripherals, Portable Devices, LED Lighting
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
120V
Drain Source On State Resistance
3800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.00181
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