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TootjaWOLFSPEED
Tootja toote nrCMF20120D
Tellimiskood1863252
Tehniliste andmete leht
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id33A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.5V
Power Dissipation150W
Operating Temperature Max125°C
Product Range-
Alternatiivid tootele CMF20120D
Leiti 1 toodet
Toote ülevaade
The CMF20120D is a 1200V N-channel enhancement mode Z-FET SiC MOSFET designed for solar inverters and power supplies. It features higher system efficiency, reduced cooling requirements and increased system switching frequency.
- High speed switching with low capacitances
- High blocking voltage with low RDS(on)
- Easy to parallel and simple to drive
- Avalanche ruggedness
- Resistant to latch-up
- Halogen-free
- -5/+25V Gate to source voltage
- 40K/W Thermal resistance, junction to ambient
Rakendused
Alternative Energy, Power Management, Motor Drive & Control
Tehnilised andmed
MOSFET Module Configuration
Single
Continuous Drain Current Id
33A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
125°C
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
150W
Product Range
-
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
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Toote vastavussertifikaat
Kaal (kg):.00542