Prindi leht
CMF10120D
Silicon Carbide MOSFET, Single, N Channel, 24 A, 1.2 kV, 0.16 ohm, TO-247
Pilt on illustreeriv. Lugege toote kirjeldust.
Ei ladustata enam
Tooteteave
TootjaWOLFSPEED
Tootja toote nrCMF10120D
Tellimiskood1894656
Tehniliste andmete leht
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id24A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.16ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.5V
Power Dissipation152W
Operating Temperature Max125°C
Product Range-
Alternatiivid tootele CMF10120D
Leiti 2 toodet
Toote ülevaade
The CMF10120D is a Z-FET™ silicon carbide Power MOSFET features N-channel enhancement mode, high speed switching with low capacitance, avalanche ruggedness, easy to parallel and simple to drive, increase system switching frequency.
- High blocking voltage with low RDS
- Latch-up-resistant
- High system efficiency
- Reduced cooling requirements
Rakendused
Power Management, Motor Drive & Control
Tehnilised andmed
MOSFET Module Configuration
Single
Continuous Drain Current Id
24A
Drain Source On State Resistance
0.16ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
125°C
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
152W
Product Range
-
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.00542