Prindi leht
TSKS5400S-ASZ
Infrared Emitter, 950 nm, 30 °, Side Looking, 4.5 mW/Sr, 800 ns
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Tooteteave
TootjaVISHAY
Tootja toote nrTSKS5400S-ASZ
Tellimiskood1469627
Tehniliste andmete leht
Peak Wavelength950nm
Angle of Half Intensity30°
Diode Case StyleSide Looking
Radiant Intensity (Ie)4.5mW/Sr
Rise Time800ns
Fall Time tf-
Forward Current If(AV)100mA
Forward Voltage VF Max1.3V
Operating Temperature Min-25°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
Alternatiivid tootele TSKS5400S-ASZ
Leiti 1 toodet
Toote ülevaade
The TSKS5400S-ASZ is a 950nm Infrared Emitting Diode in GaAs technology with high radiant power. It is suitable for high pulse current operation and good spectral matching with Si photo-detectors. It is suitable for use in photointerrupters, transmissive sensors, gap sensors and reflective sensors.
- High reliability
- High radiant power
- High radiant intensity
- Low forward voltage
- ±30° Angle of half intensity
Tehnilised andmed
Peak Wavelength
950nm
Diode Case Style
Side Looking
Rise Time
800ns
Forward Current If(AV)
100mA
Operating Temperature Min
-25°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
30°
Radiant Intensity (Ie)
4.5mW/Sr
Fall Time tf
-
Forward Voltage VF Max
1.3V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (16-Jan-2020)
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85414100
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (16-Jan-2020)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000227
Toote jälitatavus