STPSC20H065CWY
Silicon Carbide Schottky Diode, 650V Series, Dual Common Cathode, 650 V, 20 A, 28.5 nC, TO-247
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| Kogus | |
|---|---|
| 1+ | 6,720 € |
| 5+ | 6,360 € |
| 10+ | 5,990 € |
| 50+ | 3,930 € |
| 100+ | 3,750 € |
| 250+ | 3,680 € |
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The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
650V
650V
28.5nC
3 Pin
Through Hole
No SVHC (21-Jan-2025)
Dual Common Cathode
20A
TO-247
175°C
-
Tehnilised dokumendid (2)
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Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
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RoHS
RoHS
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