STPSC10TH13TI
Silicon Carbide Schottky Diode, 650V Series, Dual Series, 650 V, 10 A, 28.5 nC, TO-220AB
Vajate rohkem?
| Kogus | |
|---|---|
| 1+ | 6,270 € |
| 5+ | 5,810 € |
| 10+ | 5,350 € |
| 50+ | 4,880 € |
| 100+ | 4,420 € |
| 250+ | 3,960 € |
Tooteteave
Toote ülevaade
The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
Märkused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
650V
650V
28.5nC
3 Pin
Through Hole
No SVHC (21-Jan-2025)
Dual Series
10A
TO-220AB
175°C
-
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
RoHS
RoHS
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