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GD75HHU120C5S
IGBT Module, H Bridge, 115 A, 3.1 V, 667 W, 125 °C, Module
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Tooteteave
TootjaSTARPOWER
Tootja toote nrGD75HHU120C5S
Tellimiskood3549275
Tehniliste andmete leht
IGBT ConfigurationH Bridge
Continuous Collector Current115A
DC Collector Current115A
Collector Emitter Saturation Voltage Vce(on)3.1V
Collector Emitter Saturation Voltage3.1V
Power Dissipation667W
Power Dissipation Pd667W
Junction Temperature Tj Max125°C
Operating Temperature Max125°C
Transistor Case StyleModule
IGBT TerminationPress Fit
Collector Emitter Voltage Max1.2kV
Collector Emitter Voltage V(br)ceo1.2kV
IGBT TechnologyNPT Ultra Fast IGBT
Transistor MountingPanel
Product Range-
SVHCNo SVHC (25-Jun-2020)
Alternatiivid tootele GD75HHU120C5S
Leiti 1 toodet
Toote ülevaade
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
IGBT Configuration
H Bridge
DC Collector Current
115A
Collector Emitter Saturation Voltage
3.1V
Power Dissipation Pd
667W
Operating Temperature Max
125°C
IGBT Termination
Press Fit
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (25-Jun-2020)
Continuous Collector Current
115A
Collector Emitter Saturation Voltage Vce(on)
3.1V
Power Dissipation
667W
Junction Temperature Tj Max
125°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
IGBT Technology
NPT Ultra Fast IGBT
Product Range
-
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (25-Jun-2020)
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Kaal (kg):.3