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GD150HFU120C2S
IGBT Module, Half Bridge, 280 A, 3.1 V, 1.147 kW, 125 °C, Module
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Tooteteave
TootjaSTARPOWER
Tootja toote nrGD150HFU120C2S
Tellimiskood3549229
Tehniliste andmete leht
IGBT ConfigurationHalf Bridge
Continuous Collector Current280A
DC Collector Current280A
Collector Emitter Saturation Voltage Vce(on)3.1V
Collector Emitter Saturation Voltage3.1V
Power Dissipation1.147kW
Power Dissipation Pd1.147kW
Junction Temperature Tj Max125°C
Operating Temperature Max125°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
Collector Emitter Voltage V(br)ceo1.2kV
IGBT TechnologyNPT Ultra Fast IGBT
Transistor MountingPanel
Product Range-
SVHCNo SVHC (25-Jun-2020)
Toote ülevaade
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
IGBT Configuration
Half Bridge
DC Collector Current
280A
Collector Emitter Saturation Voltage
3.1V
Power Dissipation Pd
1.147kW
Operating Temperature Max
125°C
IGBT Termination
Stud
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (25-Jun-2020)
Continuous Collector Current
280A
Collector Emitter Saturation Voltage Vce(on)
3.1V
Power Dissipation
1.147kW
Junction Temperature Tj Max
125°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
IGBT Technology
NPT Ultra Fast IGBT
Product Range
-
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (25-Jun-2020)
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Kaal (kg):.2