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SGDR600P1
Reference Design & Demonstration Board, 6A JFET Gate Driver
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TootjaSEMISOUTH
Tootja toote nrSGDR600P1
Tellimiskood1973236
Tehniliste andmete leht
Silicon ManufacturerSemisouth
Silicon Core Number-
Kit Application TypeDriver - Bridge
Application Sub TypePower Manager
Core Architecture-
Core Sub-Architecture-
Silicon Family Name-
Kit ContentsReference Design Board SGDR600P1
Product Range-
SVHCNo SVHC (17-Dec-2014)
Toote ülevaade
The SGDR600P1 is an opto isolated, two stage gate driver with a single output evaluation board. The driver is optimized for high speed, hard switching of SJEP120R050 and SJEP120R063 normally off SiC VJFETs. With a small modification effort it can also be used to drive the SJEP120R100, SJDP120R085, or SJDP120R045. The SGDR600P1 gate driver provides a peak output current of 6A/-3A for fast turn on transients yielding record low switching energy losses.
- Suitable for driving SJEP120R063 or SJEP120R050
- Two stage driver(switching & conduction)
- Peak gate current of 6A/-3A
- 0 to 100 percent duty cycle
- Can be modified to drive SJEP120R100, SJDP120R085, or SJDP120R045
Rakendused
Power Management, Communications & Networking
Tehnilised andmed
Silicon Manufacturer
Semisouth
Kit Application Type
Driver - Bridge
Core Architecture
-
Silicon Family Name
-
Product Range
-
Silicon Core Number
-
Application Sub Type
Power Manager
Core Sub-Architecture
-
Kit Contents
Reference Design Board SGDR600P1
SVHC
No SVHC (17-Dec-2014)
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85423190
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Vajab kinnitamist
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
Väga ohtlik aine:No SVHC (17-Dec-2014)
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Kaal (kg):.036854