Prindi leht
SKM100GB125DN
IGBT Module, Half Bridge, 100 A, 3.3 V, 150 °C, Module
Pilt on illustreeriv. Lugege toote kirjeldust.
5 Laos
16 Varusid saab nüüd reserveerida
Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 1+ | 205,400 € |
| 5+ | 190,580 € |
| 10+ | 173,170 € |
Hind:Each
Minimaalne: 1
Mitmekordne: 1
205,40 € (KM-ta)
tootemärkus
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Tooteteave
TootjaSEMIKRON
Tootja toote nrSKM100GB125DN
Tellimiskood2423681
Tehniliste andmete leht
IGBT ConfigurationHalf Bridge
Transistor PolarityDual N Channel
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage Vce(on)3.3V
Collector Emitter Saturation Voltage3.3V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max150°C
Junction Temperature Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationStud
No. of Pins7Pins
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
Toote ülevaade
The SKM100GB125DN is a 1200V N-channel Ultra Fast IGBT Module with fast and soft inverse CAL diodes. This transistor is ideal for resonant inverters up to 100kHz and Electronic welders as well inductive heating.
- Low inductance
- Short tail current with low temperature dependence
- High short circuit capability
- Isolated copper baseplate using DCB (Direct Copper Bonding) technology
- Large clearance (10mm) and creepage distances (20mm)
Rakendused
Power Management, Industrial
Hoiatused
ESD sensitive device, take proper precaution while handling the device however ESD packaging is not necessary. Due to technical requirements, component may contain dangerous substances.
Tehnilised andmed
IGBT Configuration
Half Bridge
DC Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
3.3V
Power Dissipation Pd
-
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
Transistor Polarity
Dual N Channel
Continuous Collector Current
100A
Collector Emitter Saturation Voltage
3.3V
Power Dissipation
-
Junction Temperature Tj Max
150°C
Transistor Case Style
Module
No. of Pins
7Pins
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Tehnilised dokumendid (1)
Seotud tooted
Leiti 4 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Italy
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Italy
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.18
Toote jälitatavus