Prindi leht
Tooteteave
TootjaROHM
Tootja toote nrRB521S-30TE61
Tellimiskood1525504
TootevalikRB521
Tehniliste andmete leht
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage30V
Average Forward Current200mA
Forward Voltage Max500mV
Forward Surge Current1A
Operating Temperature Max125°C
Diode Case StyleSOD-523
No. of Pins2Pins
Reverse Recovery Time-
Diode MountingSurface Mount
Product RangeRB521
Qualification-
Alternatiivid tootele RB521S-30TE61
Leiti 5 toodet
Toote ülevaade
The RB521S-30TE61 is a surface mount silicon epitaxial planer Schottky Barrier Diode features ultra small mould type (EMD2) and high reliability. It is suitable for low current rectification.
- Low reverse current
- 125°C Junction temperature
Rakendused
Industrial
Tehnilised andmed
Diode Configuration
Single
Average Forward Current
200mA
Forward Surge Current
1A
Diode Case Style
SOD-523
Reverse Recovery Time
-
Product Range
RB521
Repetitive Peak Reverse Voltage
30V
Forward Voltage Max
500mV
Operating Temperature Max
125°C
No. of Pins
2Pins
Diode Mounting
Surface Mount
Qualification
-
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:South Korea
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:South Korea
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000073