Prindi leht
QS6M3TR
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.17 ohm
Pilt on illustreeriv. Lugege toote kirjeldust.
230 615 Laos
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Tarneaeg 1–2 tööpäeva
Tellige enne kella 17:00 tavaline saadetis
| Kogus | |
|---|---|
| 5+ | 0,771 € |
| 10+ | 0,470 € |
| 100+ | 0,340 € |
| 500+ | 0,240 € |
| 1000+ | 0,213 € |
| 5000+ | 0,187 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 5
Mitmekordne: 5
3,86 € (KM-ta)
Lisage tootenr/ /tootemärkus
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Tooteteave
TootjaROHM
Tootja toote nrQS6M3TR
Tellimiskood1525473
Tehniliste andmete leht
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel1.5A
Continuous Drain Current Id P Channel1.5A
Drain Source On State Resistance N Channel0.17ohm
Drain Source On State Resistance P Channel0.17ohm
Transistor Case StyleTSMT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Toote ülevaade
The QS6M3TR is a N/P-channel MOSFET designed as low ON-resistance device by the micro-processing technologies useful for wide range of applications. This device is suitable for use with coin processing machines, handy type digital multi-meter, PLC (programmable logic controller) AC servo, network attached storage and DVR/DVS applications.
- 2.5V Drive
- Fast switching speed
- Small surface-mount package
- Low ON-resistance
- Built-in G-S protection diode
Rakendused
Industrial, Power Management, Portable Devices, Motor Drive & Control
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
1.5A
Drain Source On State Resistance P Channel
0.17ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
1.5A
Drain Source On State Resistance N Channel
0.17ohm
Transistor Case Style
TSMT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:South Korea
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:South Korea
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (23-Jan-2024)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000014