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BM3G007MUV-EVK-003
Evaluation Board, BM3G007MUV-LBE2, GaN HEMT Power Stage, Power Management
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3 Laos
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| Kogus | |
|---|---|
| 1+ | 21,100 € |
Hind:Each
Minimaalne: 1
Mitmekordne: 1
21,10 € (KM-ta)
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Tooteteave
TootjaROHM
Tootja toote nrBM3G007MUV-EVK-003
Tellimiskood4240700
Tehniliste andmete leht
Silicon ManufacturerRohm Semiconductor
Silicon Core NumberBM3G007MUV-LBE2
Kit Application TypePower Management
Application Sub TypeGaN HEMT Power Stage
Kit ContentsEvaluation Board BM3G007MUV-LBE2
Product Range-
SVHCTo Be Advised
Toote ülevaade
BM3G007MUV-EVK-003 is a 650V GaN HEMT power stage BM3G007MUV evaluation board. The BM3G007MUV-EVK-003 evaluation board consists of the BM3G007MUV (GaN FET (650V 70mohm), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
- Power supply voltage range from 6.25V to 35V
- Drain voltage max is 650V
- VDD quiescent current is 0.24mA (max)
- Positive-going input threshold of 2V and negative-going input threshold of 1.55V max
- Output current range 2 is 20V/ns
- Operating temperature range from -10 to +65°C
Tehnilised andmed
Silicon Manufacturer
Rohm Semiconductor
Kit Application Type
Power Management
Kit Contents
Evaluation Board BM3G007MUV-LBE2
SVHC
To Be Advised
Silicon Core Number
BM3G007MUV-LBE2
Application Sub Type
GaN HEMT Power Stage
Product Range
-
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Japan
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Japan
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:84733020
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:To Be Advised
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Kaal (kg):.000001