Prindi leht
NVBG032N065M3S
Silicon Carbide MOSFET, Single, N Channel, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK)
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750 Laos
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Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 10+ | 9,730 € |
| 50+ | 9,080 € |
| 100+ | 8,420 € |
| 250+ | 8,250 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 10
Mitmekordne: 1
102,30 € (KM-ta)
Sellele tootele lisatakse ümberkerimise tasu 5,00 €
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Tooteteave
TootjaONSEMI
Tootja toote nrNVBG032N065M3S
Tellimiskood4583075RL
Tehniliste andmete leht
Continuous Drain Current Id52A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.044ohm
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
Operating Temperature Max175°C
Toote ülevaade
NVBG032N065M3S is an EliteSiC 650V M3S MOSFET in a 7 pin D2PAK package. It uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include automotive on board charger and automotive DC−DC converter for EV/HEV.
- Drain to source voltage is 650V, maximum drain current is 52A
- Typical RDS(ON) = 32mohm at VGS = 18V
- Ultra low gate charge QG(tot) = 69nC
- High speed switching with low capacitance (Coss = 113pF)
- 100% avalanche tested
- AEC−Q101 qualified and PPAP capable
- Operating junction temperature range from -55 to +175°C
Tehnilised andmed
Continuous Drain Current Id
52A
Drain Source On State Resistance
0.044ohm
Rds(on) Test Voltage
18V
Power Dissipation
200W
Drain Source Voltage Vds
650V
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
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Toote vastavussertifikaat
Kaal (kg):.000001
Toote jälitatavus