Prindi leht
NGTB30N120IHLWG
IGBT, 60 A, 1.75 V, 260 W, 1.2 kV, TO-247, 3 Pins
Pilt on illustreeriv. Lugege toote kirjeldust.
Ei toodeta enam
Tooteteave
TootjaONSEMI
Tootja toote nrNGTB30N120IHLWG
Tellimiskood2321666
Tehniliste andmete leht
Continuous Collector Current60A
Collector Emitter Saturation Voltage1.75V
Power Dissipation260W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Toote ülevaade
The NGTB30N120IHLWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
- Low saturation voltage using Trench with field-stop technology
- Low switching loss - Reduces system power dissipation
- Optimized for low case temperature in IH cooker application
- Low gate charge
- Low conduction loss
Rakendused
HVAC, Consumer Electronics, Power Management
Tehnilised andmed
Continuous Collector Current
60A
Power Dissipation
260W
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
1.75V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Tehnilised dokumendid (2)
Seotud tooted
Leiti 2 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.00542