Prindi leht
MBT3946DW1T1G
Bipolar Transistor Array, General Purpose, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA
Pilt on illustreeriv. Lugege toote kirjeldust.
TootjaONSEMI
Tootja toote nrMBT3946DW1T1G
Tellimiskood2442022
TootevalikMJxxxx Series
Tehniliste andmete leht
Saadaval tellimiseks
Tootja standardne tarneaeg: 20 nädal(at)
Teavitage mind, kui toode on uuesti laos
| Kogus | |
|---|---|
| 3000+ | 0,0297 € |
| 9000+ | 0,0239 € |
Hind:Each (Supplied on Full Reel)
Minimaalne: 3000
Mitmekordne: 3000
89,10 € (KM-ta)
Lisage tootenr/ /tootemärkus
Lisatud teie tellimuse kinnitusele, arvele ja väljastusteatele ainult sellel tellimusel.
See arv lisatakse tellimuse kinnitusele, arvele, väljastusteatele, veebipõhisele kinnitusmeilile ja tootesildile.
Tooteteave
TootjaONSEMI
Tootja toote nrMBT3946DW1T1G
Tellimiskood2442022
TootevalikMJxxxx Series
Tehniliste andmete leht
Transistor PolarityComplementary NPN and PNP
Collector Emitter Voltage Max NPN40V
Collector Emitter Voltage Max PNP40V
Continuous Collector Current NPN200mA
Continuous Collector Current PNP200mA
Power Dissipation NPN150mW
Power Dissipation PNP150mW
DC Current Gain hFE Min NPN250hFE
DC Current Gain hFE Min PNP250hFE
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN300MHz
Transition Frequency PNP250MHz
Product RangeMJxxxx Series
Qualification-
SVHCNo SVHC (27-Jun-2024)
Toote ülevaade
The MBT3946DW1T1G is a NPN-PNP complementary Bipolar Transistor Array housed in a surface-mount package designed for general purpose amplifier applications. By putting two discrete devices in one package, this device is ideal for low-power surface-mount applications where board space is at a premium.
- 100 to 300 hFE
- ≤0.4V Low VCE(sat)
- Simplifies circuit design
- Reduces board space
- Reduces component count
- Halogen-free
- -55 to 150°C Junction temperature range
Rakendused
Power Management, Industrial
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Transistor Polarity
Complementary NPN and PNP
Collector Emitter Voltage Max PNP
40V
Continuous Collector Current PNP
200mA
Power Dissipation PNP
150mW
DC Current Gain hFE Min PNP
250hFE
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
250MHz
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max NPN
40V
Continuous Collector Current NPN
200mA
Power Dissipation NPN
150mW
DC Current Gain hFE Min NPN
250hFE
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Transition Frequency NPN
300MHz
Product Range
MJxxxx Series
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (2)
Alternatiivid tootele MBT3946DW1T1G
Leiti 1 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (27-Jun-2024)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.001
Toote jälitatavus