Prindi leht
FQP30N06L
Power MOSFET, N Channel, 60 V, 32 A, 0.035 ohm, TO-220AB, Through Hole
Pilt on illustreeriv. Lugege toote kirjeldust.
Ei toodeta enam
Tooteteave
TootjaONSEMI
Tootja toote nrFQP30N06L
Tellimiskood2453442
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id32A
Drain Source On State Resistance0.035ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Toote ülevaade
The FQP30N06L is a QFET® N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
- Low gate charge
- 100% Avalanche tested
- Low crss (typical 50pF)
- ±20V Gate-source voltage
Rakendused
Power Management, Motor Drive & Control
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
32A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
79W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.035ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Y-Ex
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:Lead (27-Jun-2024)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.003039
Toote jälitatavus