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FQD10N20CTM
Power MOSFET, N Channel, 200 V, 7.8 A, 0.29 ohm, TO-252AA, Surface Mount
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Tooteteave
TootjaONSEMI
Tootja toote nrFQD10N20CTM
Tellimiskood2453893RL
Tehniliste andmete leht
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id7.8A
Drain Source On State Resistance0.29ohm
On Resistance Rds(on)0.29ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation50W
Power Dissipation Pd50W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCTo Be Advised
Toote ülevaade
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.29ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
50W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
-
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
7.8A
On Resistance Rds(on)
0.29ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
50W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Y-Ex
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:To Be Advised
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.00026
Toote jälitatavus