Prindi leht
FFSM1265A
Silicon Carbide Schottky Diode, EliteSiC, EliteSiC Series, Single, 650 V, 12 A, 40 nC, QFN
Pilt on illustreeriv. Lugege toote kirjeldust.
TootjaONSEMI
Tootja toote nrFFSM1265A
Tellimiskood2981089RL
TootevalikEliteSiC Series
Tehniliste andmete leht
589 Laos
Vajate rohkem?
Tarneaeg 1–2 tööpäeva
Tellige enne kella 17:00 tavaline saadetis
Saadaval, kuni laos jätkub
| Kogus | |
|---|---|
| 100+ | 2,050 € |
| 500+ | 1,940 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 100
Mitmekordne: 1
210,00 € (KM-ta)
Sellele tootele lisatakse ümberkerimise tasu 5,00 €
Lisage tootenr/ /tootemärkus
Lisatud teie tellimuse kinnitusele, arvele ja väljastusteatele ainult sellel tellimusel.
See arv lisatakse tellimuse kinnitusele, arvele, väljastusteatele, veebipõhisele kinnitusmeilile ja tootesildile.
Tooteteave
TootjaONSEMI
Tootja toote nrFFSM1265A
Tellimiskood2981089RL
TootevalikEliteSiC Series
Tehniliste andmete leht
Product RangeEliteSiC Series
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current12A
Total Capacitive Charge40nC
Diode Case StyleQFN
No. of Pins4 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCNo SVHC (15-Jan-2018)
Toote ülevaade
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
- Max Junction Temperature 175°C
- AEC−Q101 qualified
- Avalanche Rated 200 mJ
- No Reverse Recovery/No Forward Recovery
- Ease of Paralleling
- High Surge Current Capacity
- Positive Temperature Coefficient
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Product Range
EliteSiC Series
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
40nC
No. of Pins
4 Pin
Diode Mounting
Surface Mount
SVHC
No SVHC (15-Jan-2018)
Diode Configuration
Single
Average Forward Current
12A
Diode Case Style
QFN
Operating Temperature Max
175°C
Qualification
-
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Y-Ex
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (15-Jan-2018)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.0004
Toote jälitatavus