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Kogus | |
---|---|
1+ | 1,380 € |
10+ | 1,030 € |
100+ | 0,808 € |
500+ | 0,685 € |
1000+ | 0,658 € |
5000+ | 0,630 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 1
Mitmekordne: 1
1,38 € (KM-ta)
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Lisatud teie tellimuse kinnitusele, arvele ja väljastusteatele ainult sellel tellimusel.
See arv lisatakse tellimuse kinnitusele, arvele, väljastusteatele, veebipõhisele kinnitusmeilile ja tootesildile.
Tooteteave
TootjaONSEMI
Tootja toote nrFDS6890A
Tellimiskood9844732
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel7.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.013ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Toote ülevaade
The FDS6890A is a dual N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±8V Gate to source voltage
- 7.5A Continuous drain current
- 20A Pulsed drain current
Rakendused
Industrial, Motor Drive & Control, Power Management
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
7.5A
Drain Source On State Resistance N Channel
0.013ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Tehnilised dokumendid (3)
Seotud tooted
Leiti 2 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (27-Jun-2024)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000224
Toote jälitatavus