Prindi leht
NDC7001C
Dual MOSFET, Complementary N and P Channel, 50 V, 50 V, 340 mA, 340 mA, 1 ohm
Pilt on illustreeriv. Lugege toote kirjeldust.
31 693 Laos
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Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 5+ | 0,632 € |
| 10+ | 0,386 € |
| 100+ | 0,253 € |
| 500+ | 0,178 € |
| 1000+ | 0,157 € |
| 5000+ | 0,136 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 5
Mitmekordne: 5
3,16 € (KM-ta)
Lisage tootenr/ /tootemärkus
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Tooteteave
TootjaONSEMI
Tootja toote nrNDC7001C
Tellimiskood9844872
Tehniliste andmete leht
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel50V
Drain Source Voltage Vds P Channel50V
Continuous Drain Current Id N Channel340mA
Continuous Drain Current Id P Channel340mA
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel700mW
Power Dissipation P Channel700mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Toote ülevaade
The NDC7001C is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage, low current, switching and power supply applications.
- High saturation current
- High density cell design for low RDS (ON)
- Design using copper lead-frame for superior thermal and electrical capabilities
Rakendused
Industrial, Power Management
Tehnilised andmed
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id P Channel
340mA
Drain Source On State Resistance P Channel
1ohm
No. of Pins
6Pins
Power Dissipation P Channel
700mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
50V
Continuous Drain Current Id N Channel
340mA
Drain Source On State Resistance N Channel
1ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Tehnilised dokumendid (2)
Seotud tooted
Leiti 2 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (27-Jun-2024)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.00004
Toote jälitatavus