Prindi leht
MMUN2233LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
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42 000 Laos
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| Kogus | |
|---|---|
| 3000+ | 0,0191 € |
| 9000+ | 0,0187 € |
Hind:Each (Supplied on Full Reel)
Minimaalne: 3000
Mitmekordne: 3000
57,30 € (KM-ta)
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Tooteteave
TootjaONSEMI
Tootja toote nrMMUN2233LT1G
Tellimiskood2317870
Tehniliste andmete leht
Transistor PolaritySingle NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R14.7kohm
Base Emitter Resistor R247kohm
Transistor Case StyleSOT-23
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation400mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Toote ülevaade
MMUN2233LT1G is an MMUN2233L series NPN transistor with a monolithic bias resistor network digital transistor. It is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies circuit design, reduces board space, reduces component count
- Collector-base voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector-emitter voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector current - continuous is 100mAdc max (TA = 25°C, common for Q1 and Q2)
- Input forward voltage is 30VDC max (TA = 25°C, common for Q1 and Q2)
- Input reverse voltage is 5VDC max (TA = 25°C, common for Q1 and Q2)
- Total device dissipation is 230mW max (TA = 25°C)
- DC current gain is 200 (IC = 5.0mA, VCE = 10V, TA = 25°C)
- Input resistor range from 3.3 to 6.1kohm (TA = 25°C, common for Q1 and Q2)
- SOT-23 package, junction temperature range from -55 to +150°C
Tehnilised andmed
Transistor Polarity
Single NPN
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
4.7kohm
Transistor Case Style
SOT-23
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current
100mA
Base Emitter Resistor R2
47kohm
No. of Pins
3 Pin
Power Dissipation
400mW
DC Current Gain hFE Min
80hFE
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Tehnilised dokumendid (2)
Alternatiivid tootele MMUN2233LT1G
Leiti 1 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (27-Jun-2024)
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Toote vastavussertifikaat
Kaal (kg):.000033
Toote jälitatavus