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FDH055N15A
Power MOSFET, N Channel, 150 V, 156 A, 0.0048 ohm, TO-247, Through Hole
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TootjaONSEMI
Tootja toote nrFDH055N15A
Tellimiskood2825158
TootevalikPowerTrench
Tehniliste andmete leht
4 203 Laos
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| Kogus | |
|---|---|
| 1+ | 6,740 € |
| 5+ | 6,710 € |
| 10+ | 6,680 € |
| 50+ | 3,910 € |
| 100+ | 3,780 € |
| 250+ | 3,650 € |
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6,74 € (KM-ta)
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Tooteteave
TootjaONSEMI
Tootja toote nrFDH055N15A
Tellimiskood2825158
TootevalikPowerTrench
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id156A
Drain Source On State Resistance0.0048ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation429W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangePowerTrench
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Toote ülevaade
FDH055N15A is a N-channel, POWERTRENCH® MOSFET. This N-channel MOSFET is produced using Onsemi’s advanced POWERTRENCH process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The application includes synchronous rectification for ATX / sever / telecom PSU, battery protection circuit, motor drives and uninterruptible power supplies, micro solar inverter.
- Fast switching speed, low gate charge, high power and current handling capability
- High performance trench technology for extremely low RDS(on)
- Static drain to source on resistance is 4.8mohm typ (VGS = 10V, ID = 120A, TC = 25°C)
- Drain to source breakdown voltage is 150V min (ID = 250µA, VGS = 0V, TC = 25°C)
- Breakdown voltage temperature coefficient is 0.1V/°C typ (ID = 250µA, Referenced to 25°C)
- Gate threshold voltage range from 2.0 to 4.0V (VGS = VDS, ID = 250µA, 25°C)
- Input capacitance is 7100pF typ (VDS = 75V, VGS = 0V, f = 1MHz, 25°C)
- Output capacitance is 664pF typ (VDS = 75V, VGS = 0V, f = 1MHz, 25°C)
- Power dissipation is 429W (25°C)
- TO−247−3LD package, operating temperature range from -55 to + 175°C
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
156A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
429W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.0048ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
PowerTrench
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Y-Ex
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:Lead (27-Jun-2024)
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Toote vastavussertifikaat
Kaal (kg):.006867
Toote jälitatavus