Prindi leht
FDC6305N
Dual MOSFET, N Channel, 20 V, 2.7 A, 0.08 ohm
Pilt on illustreeriv. Lugege toote kirjeldust.
Saadaval tellimiseks
Tootja standardne tarneaeg: 17 nädal(at)
Teavitage mind, kui toode on uuesti laos
| Kogus | |
|---|---|
| 3000+ | 0,187 € |
| 9000+ | 0,177 € |
Hind:Each (Supplied on Full Reel)
Minimaalne: 3000
Mitmekordne: 3000
561,00 € (KM-ta)
Lisage tootenr/ /tootemärkus
Lisatud teie tellimuse kinnitusele, arvele ja väljastusteatele ainult sellel tellimusel.
See arv lisatakse tellimuse kinnitusele, arvele, väljastusteatele, veebipõhisele kinnitusmeilile ja tootesildile.
Tooteteave
TootjaONSEMI
Tootja toote nrFDC6305N
Tellimiskood2438424
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel2.7A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.08ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Toote ülevaade
The FDC6305N is a dual N-channel low threshold MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is suitable for use with load switch, DC-to-DC converters and motor driving applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Rakendused
Industrial, Motor Drive & Control, Power Management
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
2.7A
Drain Source On State Resistance N Channel
0.08ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (27-Jun-2024)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.001
Toote jälitatavus