FCD4N60TM

The FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

• Ultra low gate charge (Qg = 12.8nC)
• Low effective output capacitance (Coss.eff = 32pF)
• 100% avalanche tested

Rakendused

Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy

Hoiatused

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.