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Tooteteave
TootjaNXP
Tootja toote nrBF904,215
Tellimiskood1349657
Tehniliste andmete leht
Drain Source Voltage Vds7V
Continuous Drain Current Id30mA
Power Dissipation200mW
Operating Frequency Min40MHz
Operating Frequency Max3GHz
Transistor Case StyleSOT-143B
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Toote ülevaade
The BF904 is a dual gate N-channel MOSFET encapsulated in a plastic micro-miniature package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. It is designed for use with VHF and UHF applications with 3 to 7V supply voltage such as television tuners and professional communications equipment.
- Specially designed for use at 5V supply voltage
- Short channel transistor with high transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1GHz
- Superior cross-modulation performance during AGC
Rakendused
Industrial, Communications & Networking, Power Management
Tehnilised andmed
Drain Source Voltage Vds
7V
Power Dissipation
200mW
Operating Frequency Max
3GHz
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
30mA
Operating Frequency Min
40MHz
Transistor Case Style
SOT-143B
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
Tehnilised dokumendid (1)
Seotud tooted
Leiti 2 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Hong Kong
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Hong Kong
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
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Toote vastavussertifikaat
Kaal (kg):.001