Prindi leht
PBSS8110T,215
Bipolar (BJT) Single Transistor, NPN, 100 V, 1 A, 300 mW, SOT-23, Surface Mount
Pilt on illustreeriv. Lugege toote kirjeldust.
Saadaval tellimiseks
Tootja standardne tarneaeg: 12 nädal(at)
Teavitage mind, kui toode on uuesti laos
| Kogus | |
|---|---|
| 100+ | 0,242 € |
| 500+ | 0,181 € |
| 1500+ | 0,151 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 100
Mitmekordne: 5
29,20 € (KM-ta)
Sellele tootele lisatakse ümberkerimise tasu 5,00 €
tootemärkus
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Tooteteave
TootjaNEXPERIA
Tootja toote nrPBSS8110T,215
Tellimiskood8736650RL
Tehniliste andmete leht
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Continuous Collector Current1A
Power Dissipation300mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min150hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Toote ülevaade
PBSS8110T,215 is a NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Typical applications include major application segments: automotive 42V power, telecom infrastructure, industrial, power management: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers: driver in low supply voltage applications (e.g. lamps and LEDs), inductive load driver (e.g. relays, buzzers and motors).
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- Collector-base breakdown voltage is 120V min at IC=100µA; IE=0A; Tamb=25°C
- Collector-emitter breakdown voltage is 100V min (IC=10mA, IB=0A, pulsed; tp ≤ 300μ, T=25°C)
- Emitter-base breakdown voltage (collector open) is 5V min at IE=100µA; IC=0A; Tamb=25°C
- DC current gain is 150 min at VCE=10V; IC=1mA; Tamb=25°C
- Transition frequency is 100MHz min at VCE=10V; IC=50mA; f=100MHz;Tamb=25°C
- Collector-emitter saturation resistance is 200mohm typ at IC=1A, IB=100mA, Tamb =25°C
- Total power dissipation is 300mW max at Tamb ≤ 25°C
- Ambient temperature range from -65 to 150°C
Tehnilised andmed
Transistor Polarity
NPN
Continuous Collector Current
1A
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
150hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
100V
Power Dissipation
300mW
Transistor Mounting
Surface Mount
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Tehnilised dokumendid (3)
Alternatiivid tootele PBSS8110T,215
Leiti 1 toodet
Seotud tooted
Leiti 2 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (25-Jun-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000008
Toote jälitatavus