Prindi leht
NX2301P,215
Power MOSFET, P Channel, 20 V, 2 A, 0.12 ohm, SOT-23, Surface Mount
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Tooteteave
TootjaNEXPERIA
Tootja toote nrNX2301P,215
Tellimiskood1894738RL
Tehniliste andmete leht
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2A
Drain Source On State Resistance0.12ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max750mV
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Toote ülevaade
The NX2301P is a P-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 1.8V RDSon rated for Low Voltage Gate Drive
- Very Fast Switching
- AEC-Q101 Qualified
Rakendused
Audio, Signal Processing, Power Management
Tehnilised andmed
Channel Type
P Channel
Continuous Drain Current Id
2A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
750mV
No. of Pins
3Pins
Product Range
-
MSL
-
Tehnilised dokumendid (3)
Seotud tooted
Leiti 4 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:China
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (25-Jun-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000007
Toote jälitatavus