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Tooteteave
TootjaNEXPERIA
Tootja toote nrBUK9Y30-75B,115
Tellimiskood1769690
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id34A
Drain Source On State Resistance0.028ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation85W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Toote ülevaade
The BUK9Y30-75B is a N-channel enhancement-mode logic level FET in a plastic package using TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in automotive critical applications.
- Low conduction losses due to low ON-state resistance
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175°C rating
- -55 to 175°C Junction temperature range
Rakendused
Automotive, Power Management, Motor Drive & Control, Lighting, Automation & Process Control, Industrial
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
34A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
5V
Power Dissipation
85W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Philippines
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Y-Ex
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:Lead (25-Jun-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.000896
Toote jälitatavus