Prindi leht
MT53E256M32D1KS-046 AIT:L
DRAM, AEC-Q100, LPDDR4, 8 Gbit, 256M x 32bit, 2.133 GHz, VFBGA
Pilt on illustreeriv. Lugege toote kirjeldust.
Saadaval tellimiseks
Tootja standardne tarneaeg: 41 nädal(at)
Teavitage mind, kui toode on uuesti laos
| Kogus | |
|---|---|
| 1+ | 30,300 € |
| 5+ | 29,260 € |
| 10+ | 28,220 € |
| 25+ | 27,920 € |
| 50+ | 27,230 € |
Hind:Each
Minimaalne: 1
Mitmekordne: 1
30,30 € (KM-ta)
tootemärkus
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Tooteteave
TootjaMICRON
Tootja toote nrMT53E256M32D1KS-046 AIT:L
Tellimiskood4242611
Tehniliste andmete leht
DRAM TypeLPDDR4
Memory Density8Gbit
Memory Configuration256M x 32bit
Clock Frequency Max2.133GHz
IC Case / PackageVFBGA
No. of Pins-
Supply Voltage Nom-
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max95°C
Product Range-
SVHCNo SVHC (17-Dec-2015)
Toote ülevaade
MT53E256M32D1KS-046 AIT:L is an automotive LPDDR4X/LPDDR4 SDRAM. The 8Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.
- Frequency range: 2133–10MHz (data rate range per pin: 4266–20Mb/s)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL =16/32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Selectable output drive strength (DS), clock-stop capability, single-ended CK and DQS support
- 256 Meg x 32 (2 channels x 16 I/O) array configuration
- 200-ball VFBGA package, AEC-Q100 qualified
- Operating temperature range from -40°C to +95°C
Tehnilised andmed
DRAM Type
LPDDR4
Memory Configuration
256M x 32bit
IC Case / Package
VFBGA
Supply Voltage Nom
-
Operating Temperature Min
-40°C
Product Range
-
SVHC
No SVHC (17-Dec-2015)
Memory Density
8Gbit
Clock Frequency Max
2.133GHz
No. of Pins
-
IC Mounting
Surface Mount
Operating Temperature Max
95°C
MSL
MSL 3 - 168 hours
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Taiwan
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Taiwan
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (17-Dec-2015)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.001529
Toote jälitatavus