MT53D1024M32D4DT-046 WT:D

MT53D1024M32D4DT-046 WT:D 8Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks.

• 1.10V VDD2 / 0.60V VDDQ or 1.10V VDDQ operating voltage, 1024 Meg x 32 configuration
• LPDDR4, 4 die addressing, 468ps, tCK RL = 36/40 cycle time
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL)
• Programmable and on-the-fly burst lengths (BL = 16, 32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
• 200-ball WFBGA package
• Operating temperature range from -25°C to +85°C

Hoiatused

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.