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BD232
Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 20 W, TO-126, Through Hole
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TootjaMAGNATEC
Tootja toote nrBD232
Tellimiskood1208611
Tehniliste andmete leht
Transistor PolarityNPN
Collector Emitter Voltage Max300V
Continuous Collector Current500mA
Power Dissipation20W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min25hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Toote ülevaade
The BD232 is a NPN silicon medium-power Bipolar Transistor for power output stages and line driver in television receivers.
- -55 to 150°C Operating temperature range
Rakendused
Power Management, RF Communications, Industrial
Tehnilised andmed
Transistor Polarity
NPN
Continuous Collector Current
500mA
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
25hFE
Product Range
-
Collector Emitter Voltage Max
300V
Power Dissipation
20W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
Tehnilised dokumendid (1)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Great Britain
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Great Britain
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
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Kaal (kg):.00064