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MII75-12A3
IGBT Module, Dual [Half Bridge], 90 A, 2.2 V, 370 W, 125 °C, Module
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TootjaIXYS SEMICONDUCTOR
Tootja toote nrMII75-12A3
Tellimiskood2782990
Tehniliste andmete leht
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current90A
Continuous Collector Current90A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)2.2V
Power Dissipation Pd370W
Power Dissipation370W
Junction Temperature Tj Max125°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max125°C
Transistor Case StyleModule
No. of Pins11Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (12-Jan-2017)
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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
90A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
370W
Junction Temperature Tj Max
125°C
Operating Temperature Max
125°C
No. of Pins
11Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (12-Jan-2017)
Transistor Polarity
N Channel
Continuous Collector Current
90A
Collector Emitter Saturation Voltage Vce(on)
2.2V
Power Dissipation
370W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85415000
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Y-Ex
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (12-Jan-2017)
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Kaal (kg):.11
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