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MID75-12A3
IGBT Module, Single, 90 A, 2.2 V, 190 W, 125 °C, Y4-M5
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TootjaIXYS SEMICONDUCTOR
Tootja toote nrMID75-12A3
Tellimiskood2674829
Tehniliste andmete leht
IGBT ConfigurationSingle
Transistor PolarityN Channel
DC Collector Current90A
Continuous Collector Current90A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)2.2V
Power Dissipation Pd190W
Power Dissipation190W
Operating Temperature Max125°C
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature Tj Max125°C
Transistor Case StyleY4-M5
No. of Pins5Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (12-Jan-2017)
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Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
IGBT Configuration
Single
DC Collector Current
90A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
190W
Operating Temperature Max
125°C
Junction Temperature Tj Max
125°C
No. of Pins
5Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (12-Jan-2017)
Transistor Polarity
N Channel
Continuous Collector Current
90A
Collector Emitter Saturation Voltage Vce(on)
2.2V
Power Dissipation
190W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Y4-M5
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Y-Ex
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (12-Jan-2017)
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Kaal (kg):.108
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