Prindi leht
MDI200-12A4
IGBT Module, Single, 270 A, 2.2 V, 1.13 kW, 150 °C, Module
Pilt on illustreeriv. Lugege toote kirjeldust.
Ei toodeta enam
Tooteteave
TootjaIXYS SEMICONDUCTOR
Tootja toote nrMDI200-12A4
Tellimiskood2782989
Tehniliste andmete leht
IGBT ConfigurationSingle
Transistor PolarityN Channel
DC Collector Current270A
Continuous Collector Current270A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)2.2V
Power Dissipation Pd1.13kW
Power Dissipation1.13kW
Operating Temperature Max150°C
Junction Temperature Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
No. of Pins11Pins
IGBT TerminationStud
IGBT TechnologyNPT IGBT [Standard]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCNo SVHC (07-Jul-2017)
Tehnilised andmed
IGBT Configuration
Single
DC Collector Current
270A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
1.13kW
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
11Pins
IGBT Technology
NPT IGBT [Standard]
Transistor Mounting
Panel
SVHC
No SVHC (07-Jul-2017)
Transistor Polarity
N Channel
Continuous Collector Current
270A
Collector Emitter Saturation Voltage Vce(on)
2.2V
Power Dissipation
1.13kW
Junction Temperature Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Product Range
-
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85415000
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Y-Ex
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (07-Jul-2017)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.25