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IXTN36N50
MOSFET Transistor, N Channel, 36 A, 500 V, 0.12 ohm, 10 V, 5 V
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TootjaIXYS SEMICONDUCTOR
Tootja toote nrIXTN36N50
Tellimiskood9359214
Tehniliste andmete leht
Channel TypeN Channel
Continuous Drain Current Id36A
Drain Source Voltage Vds500V
Drain Source On State Resistance0.12ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation400W
Operating Temperature Max150°C
Product Range-
Toote ülevaade
The IXTN36N50 is a MegaMOS™FRED N-channel enhancement-mode Power MOSFET offers rugged polysilicon gate cell structure and low RDS (ON) HDMOS™ process. It is uninterruptible power systems (UPS), DC choppers, switch-mode and resonant-mode power supplies.
- International standard package miniBLOC (ISOTOP compatible)
- Low drain-to-case capacitance (<lt/>50pF)
- Low package inductance (<lt/>10nH) - Easy to drive and to protect
- Easy to mount with 2 screws
- Space saving
- High power density
Rakendused
Motor Drive & Control, Robotics, Power Management
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds
500V
Rds(on) Test Voltage
10V
Power Dissipation
400W
Product Range
-
Continuous Drain Current Id
36A
Drain Source On State Resistance
0.12ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
150°C
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
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Kaal (kg):.03984