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IXFN64N60P
MOSFET Transistor, N Channel, 64 A, 600 V, 0.096 ohm, 10 V, 5 V
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Tooteteave
TootjaIXYS SEMICONDUCTOR
Tootja toote nrIXFN64N60P
Tellimiskood1427328
Tehniliste andmete leht
Channel TypeN Channel
Continuous Drain Current Id64A
Drain Source Voltage Vds600V
Drain Source On State Resistance0.096ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation700W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Toote ülevaade
The IXFN64N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- miniBLOC with aluminium nitride isolation
- UL94V-0 Flammability rating
- Unclamped inductive switching (UIS) rated
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
- Low RDS (ON) HDMOS™ process
Rakendused
Power Management, Industrial, Motor Drive & Control, Lighting, Thermal Management
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds
600V
Rds(on) Test Voltage
10V
Power Dissipation
700W
Product Range
-
Continuous Drain Current Id
64A
Drain Source On State Resistance
0.096ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
150°C
SVHC
No SVHC (17-Jan-2023)
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (17-Jan-2023)
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Kaal (kg):.03