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TootjaIXYS SEMICONDUCTOR
Tootja toote nrIXFN64N50P
Tellimiskood1427327
Tehniliste andmete leht
Channel TypeN Channel
Continuous Drain Current Id64A
Drain Source Voltage Vds500V
Drain Source On State Resistance0.085ohm
Rds(on) Test Voltage10V
Transistor Case StyleISOTOP
Gate Source Threshold Voltage Max5.5V
Transistor MountingModule
Power Dissipation700W
Operating Temperature Max150°C
No. of Pins4Pins
Product Range-
SVHCNo SVHC (12-Jan-2017)
Toote ülevaade
The IXFN64N50P is a single N-channel Power MOSFET with fast intrinsic diode (HiPerFET™). It features low gate drive requirement and high power density. It is suitable for DC-to-DC converters, laser drivers, switched-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Fast intrinsic diode
- Avalanche rating
- Low static drain-to-source ON-resistance
- 2500V Isolation voltage
Rakendused
Power Management, Motor Drive & Control
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds
500V
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5.5V
Power Dissipation
700W
No. of Pins
4Pins
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
64A
Drain Source On State Resistance
0.085ohm
Transistor Case Style
ISOTOP
Transistor Mounting
Module
Operating Temperature Max
150°C
Product Range
-
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (12-Jan-2017)
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Toote vastavussertifikaat
Kaal (kg):.03
Toote jälitatavus