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IXFN60N60
MOSFET Transistor, N Channel, 60 A, 600 V, 0.075 ohm, 10 V, 4.5 V
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Tooteteave
TootjaIXYS SEMICONDUCTOR
Tootja toote nrIXFN60N60
Tellimiskood4905623
Tehniliste andmete leht
Channel TypeN Channel
Continuous Drain Current Id60A
Drain Source Voltage Vds600V
Drain Source On State Resistance0.075ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation600W
Operating Temperature Max150°C
Product Range-
Toote ülevaade
The IXFN60N60 is a HiPerFET™ N-channel enhancement-mode Single Die MOSFET features avalanche rated and fast intrinsic rectifier.
- International standard package
- miniBLOC with aluminium nitride isolation
- Low RDS (ON) HDMOS™ process
- Unclamped inductive switching (UIS) rated
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
- High dV/dt and low trr
Rakendused
Power Management, Industrial, Motor Drive & Control, Lighting, Thermal Management
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds
600V
Rds(on) Test Voltage
10V
Power Dissipation
600W
Product Range
-
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.075ohm
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
Tehnilised dokumendid (1)
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Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
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Kaal (kg):.04