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IXFN120N20
MOSFET Transistor, N Channel, 120 A, 200 V, 0.017 ohm, 10 V, 4 V
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Tooteteave
TootjaIXYS SEMICONDUCTOR
Tootja toote nrIXFN120N20
Tellimiskood9359257
Tehniliste andmete leht
Channel TypeN Channel
Continuous Drain Current Id120A
Drain Source Voltage Vds200V
Drain Source On State Resistance0.017ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation600W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Toote ülevaade
The IXFN120N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- Encapsulating epoxy meets UL94V-0 flammability
- miniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
Rakendused
Power Management, Motor Drive & Control, Lighting
Tehnilised andmed
Channel Type
N Channel
Drain Source Voltage Vds
200V
Rds(on) Test Voltage
10V
Power Dissipation
600W
Product Range
-
Continuous Drain Current Id
120A
Drain Source On State Resistance
0.017ohm
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
No SVHC (17-Jan-2023)
Tehnilised dokumendid (2)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Germany
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (17-Jan-2023)
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Toote vastavussertifikaat
Kaal (kg):.043545