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IXA60IF1200NA
IGBT Module, Single, 88 A, 2.1 V, 290 W, 150 °C, SOT-227B
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TootjaIXYS SEMICONDUCTOR
Tootja toote nrIXA60IF1200NA
Tellimiskood1829727
Tehniliste andmete leht
Continuous Collector Current88A
IGBT ConfigurationSingle
Continuous Collector Current88A
Collector Emitter Saturation Voltage2.1V
Power Dissipation290W
Operating Temperature Max150°C
Transistor Case StyleSOT-227B
No. of Pins4Pins
IGBT TerminationScrew
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCNo SVHC (17-Jan-2023)
Toote ülevaade
The IXA60IF1200NA is a 1200V XPT IGBT with SONIC™ diode and Extreme-light Punch-Through (XPT™) thin wafer technology. Rugged XPT design results in short circuit rated for 10µsec, very low gate charge and low EMI. The thin wafer technology combined with the XPT design results in a competitive low VCE (sat). SONIC™ diode offers fast and soft reverse recovery as well low operating forward voltage.
- Easy to parallel due to the positive temperature coefficient of the on-state voltage
- Reduced thermal resistance
- Low energy losses
- Fast switching
- Low tail current
- High power density
- Square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
- Short circuit capability
Rakendused
Motor Drive & Control, Alternative Energy, Medical, Power Management
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Continuous Collector Current
88A
Continuous Collector Current
88A
Power Dissipation
290W
Transistor Case Style
SOT-227B
IGBT Termination
Screw
IGBT Technology
-
Product Range
-
IGBT Configuration
Single
Collector Emitter Saturation Voltage
2.1V
Operating Temperature Max
150°C
No. of Pins
4Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (17-Jan-2023)
Tehnilised dokumendid (3)
Seotud tooted
Leiti 3 toodet
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Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (17-Jan-2023)
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Kaal (kg):.03