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IXFH12N50F
RF FET Transistor, 500 V, 12 A, 180 W, 500 kHz, TO-247AD
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Tooteteave
TootjaIXYS RF
Tootja toote nrIXFH12N50F
Tellimiskood1347752
Tehniliste andmete leht
Drain Source Voltage Vds500V
Continuous Drain Current Id12A
Power Dissipation180W
Operating Frequency Min-
Operating Frequency Max500kHz
Transistor Case StyleTO-247AD
No. of Pins3Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingThrough Hole
Product Range-
Toote ülevaade
The IXFH12N50F is a N-channel Power MOSFET offers low package inductance hence easy to drive and to protect. It is designed for use with DC-to-DC converters, SMPS/RMPS, DC choppers, pulse generation, laser drivers and RF amplifier applications.
- RF capable MOSFET
- Enhancement-mode
- Double metal process for low gate resistance
- Rugged polysilicon gate cell structure
- Unclamped inductive switching rated
- High power density
Rakendused
Industrial, Power Management
Tehnilised andmed
Drain Source Voltage Vds
500V
Power Dissipation
180W
Operating Frequency Max
500kHz
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
12A
Operating Frequency Min
-
Transistor Case Style
TO-247AD
Operating Temperature Max
150°C
Transistor Mounting
Through Hole
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
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Kaal (kg):.006