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DE275X2-102N06A
RF FET Transistor, 1 kV, 16 A, 1.18 kW, 100 MHz, SMD
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TootjaIXYS RF
Tootja toote nrDE275X2-102N06A
Tellimiskood1347738
Teie osa number
Tehniliste andmete leht
Ei toodeta enam
Tooteteave
TootjaIXYS RF
Tootja toote nrDE275X2-102N06A
Tellimiskood1347738
Tehniliste andmete leht
Drain Source Voltage Vds1kV
Continuous Drain Current Id16A
Power Dissipation1.18kW
Operating Frequency Min-
Operating Frequency Max100MHz
Transistor Case StyleSMD
No. of Pins8Pins
Operating Temperature Max175°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Toote ülevaade
The DE275X2-102N06A is a matched pair RF power MOSFET device in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65MHz very low insertion inductance and isolated substrate with excellent thermal transfer. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
- N-channel enhancement mode
- Common source push-pull pair
- Low Qg and Rg
- High dv/dt rating
- Nanosecond switching
- Low insertion inductance
Rakendused
RF Communications
Tehnilised andmed
Drain Source Voltage Vds
1kV
Power Dissipation
1.18kW
Operating Frequency Max
100MHz
No. of Pins
8Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
16A
Operating Frequency Min
-
Transistor Case Style
SMD
Operating Temperature Max
175°C
Transistor Mounting
Surface Mount
MSL
-
Tehnilised dokumendid (3)
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:United States
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
Väga ohtlik aine:No SVHC (12-Jan-2017)
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Kaal (kg):.011793