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SPD04N80C3ATMA1
Power MOSFET, N Channel, 800 V, 4 A, 1.3 ohm, TO-252 (DPAK), Surface Mount
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TootjaINFINEON
Tootja toote nrSPD04N80C3ATMA1
Tellimiskood1664108
Teise nimegaSPD04N80C3, SP001117768
Tehniliste andmete leht
6 037 Laos
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Ekspresstarne 1–2 tööpäeva jooksul
Tellige enne kella 17:00
Tasuta standardtarne
tellimustele alates 0,00 €
Täpsed tarneajad arvutatakse kassas
| Kogus | |
|---|---|
| 5+ | 0,950 € |
| 50+ | 0,726 € |
| 100+ | 0,673 € |
| 500+ | 0,666 € |
| 1000+ | 0,658 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 5
Mitmekordne: 5
4,75 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrSPD04N80C3ATMA1
Tellimiskood1664108
Teise nimegaSPD04N80C3, SP001117768
Tehniliste andmete leht
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4A
Drain Source On State Resistance1.3ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation63W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
SPD04N80C3ATMA1 is a CoolMOS™ power transistor. It is designed for industrial applications with high DC bulk voltage, and switching applications ( i.e. active clamp forward ). Potential applications are consumer, PC power, adapter, lighting, and solar.
- New revolutionary high voltage technology
- Extreme dv/dt rated, high peak current capability
- Fully qualified according to JEDEC for industrial applications
- Ultra low gate charge, ultra low effective capacitances
- High efficiency and power density, outstanding cost/performance
- High reliability, ease-of-use
- Drain-source breakdown voltage is 800V at VGS=0V, I D=250µA
- Drain-source on-state resistance is 1.3ohm at VGS=10V, I D=2.5A, Tj=25°C
- Gate charge total is 23nC typ at VDD=640V, ID=4A, VGS=0 to 10V
- PG-TO252-3 package, operating and storage temperature range from -55 to 150°C
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
63W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tehnilised dokumendid (1)
Alternatiivid tootele SPD04N80C3ATMA1
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.0003
Toote jälitatavus