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IRLML6402TRPBF
MOSFET Transistor, P Channel, 3.7A, 20V, 65 mohm, 1.3W, SOT-23
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TootjaINFINEON
Tootja toote nrIRLML6402TRPBF
Tellimiskood9103503
TootevalikHEXFET Series
Teise nimegaSP001552740
Tehniliste andmete leht
90 608 Laos
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Tarneaeg 1–2 tööpäeva
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| Kogus | |
|---|---|
| 5+ | 0,417 € |
| 50+ | 0,244 € |
| 250+ | 0,128 € |
| 1000+ | 0,107 € |
| 3000+ | 0,0854 € |
Hind:Each (Supplied on Cut Tape)
Minimaalne: 5
Mitmekordne: 5
2,08 € (KM-ta)
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Tooteteave
TootjaINFINEON
Tootja toote nrIRLML6402TRPBF
Tellimiskood9103503
TootevalikHEXFET Series
Teise nimegaSP001552740
Tehniliste andmete leht
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.7A
Drain Source On State Resistance0.065ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max550mV
Power Dissipation1.3W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Toote ülevaade
The IRLML6402PBF is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.
- Drain to source voltage (Vds) of -20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 80mohm at Vgs -2.5V
- Power dissipation Pd of 1.3W at 25°C
- Continuous drain current Id of -3.7A at Vgs -4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
- 0.01W/°C linear derating factor
Hoiatused
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehnilised andmed
Channel Type
P Channel
Continuous Drain Current Id
3.7A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
550mV
No. of Pins
3Pins
Product Range
HEXFET Series
MSL
-
Tehnilised dokumendid (1)
Alternatiivid tootele IRLML6402TRPBF
Leiti 3 toodet
Seotud tooted
Leiti 2 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Malaysia
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Väga ohtlik aine:No SVHC (21-Jan-2025)
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Toote vastavussertifikaat
Kaal (kg):.000091
Toote jälitatavus