Prindi leht
Tooteteave
TootjaINFINEON
Tootja toote nrIRG4PSH71KDPBF
Tellimiskood8650780
TootevalikIRG4
Teise nimegaSP001547842
Tehniliste andmete leht
Continuous Collector Current78A
Collector Emitter Saturation Voltage3.9V
Power Dissipation350W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-274AA
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
Alternatiivid tootele IRG4PSH71KDPBF
Leiti 1 toodet
Toote ülevaade
The IRG4PSH71KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diode optimized for operation with IGBT, to minimize EMI, noise and switching losses.
- Hole-less clip/pressure mount package
- High abort circuit rating IGBTs
- Minimum switching losses combined with low conduction losses
- Tightest parameter distribution
- IGBT co-packaged with ultrafast soft recovery anti-parallel diode
- Creepage distance increased to 5.35mm
- High current rating co-pack IGBT
- Maximum power density
Rakendused
Alternative Energy, Power Management, Motor Drive & Control
Tehnilised andmed
Continuous Collector Current
78A
Power Dissipation
350W
Transistor Case Style
TO-274AA
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
3.9V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Tehnilised dokumendid (1)
Seotud tooted
Leiti 2 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Jah
RoHS
Laadige alla vastavussertifikaat
Toote vastavussertifikaat
Kaal (kg):.006
Toote jälitatavus