Prindi leht
Tooteteave
TootjaINFINEON
Tootja toote nrIRG4PH30KDPBF
Tellimiskood9105050
TootevalikIRG4
Teise nimegaSP001536034
Tehniliste andmete leht
Continuous Collector Current20A
Collector Emitter Saturation Voltage3.1V
Power Dissipation100W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
Toote ülevaade
The IRG4PH30KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
- Combines low conduction losses with high switching speed
- Tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes
- Latest generation 4 IGBTs offer highest power density motor controls possible
Rakendused
Motor Drive & Control, Alternative Energy, Power Management
Tehnilised andmed
Continuous Collector Current
20A
Power Dissipation
100W
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
3.1V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Tehnilised dokumendid (1)
Seotud tooted
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
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Kaal (kg):.00567