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IRG4PC50UD-EPBF
IGBT, 55 A, 2 V, 200 W, 600 V, TO-247AC, 3 Pins
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TootjaINFINEON
Tootja toote nrIRG4PC50UD-EPBF
Tellimiskood8650616
Teise nimegaSP001544774
Tehniliste andmete leht
Ei toodeta enam
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Alternatiivid tootele IRG4PC50UD-EPBF
Leiti 6 toodet
Toote ülevaade
The IRG4PC50UD-EPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, <gt/>200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing.
- Optimized for specific application conditions
- Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Rakendused
Alternative Energy, Power Management, Maintenance & Repair
Tehnilised andmed
Continuous Collector Current
55A
Power Dissipation
200W
No. of Pins
3Pins
Product Range
-
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage Max
600V
Operating Temperature Max
150°C
Tehnilised dokumendid (2)
Seotud tooted
Leiti 3 toodet
Seadusandlus ja keskkonnateave
Päritoluriik:
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Riik, kus toimus viimane oluline tootmisprotsessPäritoluriik:Mexico
Riik, kus toimus viimane oluline tootmisprotsess
Tariifi nr:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-ile vastav:Jah
RoHS
Vastab RoHS-i ftalaatide nõuetele:Vajab kinnitamist
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Kaal (kg):.007875